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P5NK80ZFP Datasheet(PDF) 3 Page - STMicroelectronics |
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P5NK80ZFP Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 15 page STP5NK80Z - STP5NK80ZFP Electrical ratings 3/15 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit TO-220 TO-220FP VDS Drain-source voltage (VGS = 0) 800 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 4.3 4.3 (1) 1. Limited only by maximum temperature allowed A ID Drain current (continuous) at TC=100°C 2.7 2.7 (1) A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 17.2 17.2 (1) A PTOT Total dissipation at TC = 25°C 110 30 W Derating factor 0.88 0.24 W/°C VESD(G-S) Gate source ESD (HBM-C=100pF, R=1.5 ΚΩ) 3500 V dv/dt (3) 3. ISD ≤4.3A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Peak diode recovery voltage slope 4.5 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc= 25°C) -2500 V TJ Tstg Operating junction temperature Storage temperature -55 to 150 °C Table 2. Thermal data Symbol Parameter Value Unit TO-220 TO-220FP Rthj-case Thermal resistance junction-case max 1.14 4.2 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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