Feb. 2000

MITSUBISHI HVIGBT MODULES

CM800HB-66H

HIGH POWER SWITCHING USE

INSULATED TYPE

V

V

°C

°C

Ω

Resistive load switching operation

die / dt = –1600A /

µs

(Note 1)

Junction to case, IGBT part

Junction to case, FWDi part

Case to fin, conductive grease applied

(Note 4)

Collector cutoff current

Gate-emitter

threshold voltage

Gate-leakage current

Collector-emitter

saturation voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Emitter-collector voltage

Reverse recovery time

Reverse recovery charge

Thermal resistance

Contact thermal resistance

Collector-emitter voltage

Gate-emitter voltage

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Mounting torque

Mass

°C

Pulse

(Note 1)

°C

Pulse

(Note 1)

°C, IGBT part

—

—

Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.

Main terminals screw M8

Mounting screw M6

Auxiliary terminals screw M4

Typical value

Collector current

Emitter current

3300

±20

800

1600

800

1600

10400

–40 ~ +150

–40 ~ +125

6000

6.67 ~ 13.00

2.84 ~ 6.00

0.88 ~ 2.00

1.5

Symbol

Item

Conditions

Unit

Ratings

V

V

A

A

A

A

W

°C

°C

V

N·m

N·m

N·m

kg

—

—

Min

Typ

Max

10

0.5

4.94

—

—

—

—

—

1.60

2.00

2.50

1.00

3.64

1.40

—

0.012

0.024

—

mA

µA

nF

nF

nF

µC

µs

µs

µs

µs

V

µs

µC

K/W

K/W

K/W

—

—

3.80

4.00

120

12.0

3.6

5.7

—

—

—

—

2.80

—

270

—

—

0.008

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

(Note 2)

Symbol

Item

Conditions

Limits

Unit

6.0

4.5

°C.

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

7.5

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)