tm

July 2007

©2007 Fairchild Semiconductor Corporation

FDFS2P753AZ Rev.B

www.fairchildsemi.com

1

FDFS2P753AZ

-30V, -3A, 115m

Ω

Features

Schottky and MOSFET incorporated into single power surface

mount SO-8 package

Electrically independent Schottky and MOSFET pinout for

design flexibility

RoHS Compliant

General Description

The FDFS2P753AZ offers a single package solution for DC/DC

conversion. It combines an excellent Fairchild’s PowerTrench

MOSFET with a Schottky diode in an SO-8 package. The

MOSFET features a low on-state resistance and an optimized

gate charge to achieve fast switching. The independently

connected Schottky diode has a low forward voltage drop to

minimize power loss. This device is an Ideal DC-DC solution for

up to 3A peak load current.

Applications

DC - DC Conversion

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

-30

V

Gate to Source Voltage

±25

V

Drain Current -Continuous

(Note 1a)

-3

A

-Pulsed

-16

Power Dissipation

3.1

W

Power Dissipation

(Note 1a)

1.6

Single Pulse Avalanche Energy

(Note 2)

6

mJ

Schottky Repetitive Peak Reverse Voltage

30

V

Schottky Average Forward Current

2

A

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case

(Note 1)

40

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

78

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDFS2P753AZ

FDFS2P753AZ

SO-8

330mm

12mm

2500units

D

C

C

D

Pin 1

SO-8

G

A

A

S

G

A

A

S

D

D

C

C

5

6

7

8

3

2

1

4