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RT9602 Datasheet(PDF) 6 Page - Richtek Technology Corporation |
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RT9602 Datasheet(HTML) 6 Page - Richtek Technology Corporation |
6 / 11 page RT9602 6 DS9602-08 March 2007 www.richtek.com Application Information The RT9602 has power on protection function which held UGATE and LGATE low before VCC up cross the rising threshold voltage. After the initialization, the PWM signal takes the control. The rising PWM signal first forces the LGATE signal turns low then UGATE signal is allowed to go high just after a non-overlapping time to avoid shoot- through current. The falling of PWM signal first forces UGATE to go low. When UGATE and PHASE signal reach a predetermined low level, LGATE signal is allowed to turn high. The non-overlapping function is also presented between UGATE and LGATE signal transient. The PWM signal is recognized as high if above rising threshold and as low if below falling threshold. Any signal level in this window is considered as tri-state, which causes turn-off of both high side and low-side MOSFET. When PWM input is floating (not connected), internal divider will pull the PWM to 1.9V to give the controller a recognizable level. The maximum sink/source capability of internal PWM reference is 60 μA. The PVCC pin provides flexibility of both high side and low side MOSFET gate drive voltages. If 8V, for example, is applied to PVCC, then high side MOSFET gate drive is 8V to 1.5V (approximately, internal diode plus series resistance voltage drop). The low side gate drive voltage is exactly 8V. The RT9602 implements a power on over-voltage protection function. If the PHASE voltage exceeds 1.5V at power on, the LGATE would be turn on to pull the PHASE low until the PHASE voltage goes below 1.5V. Such function can protect the CPU from damage by some short condition happened before power on, which is sometimes encountered in the M/B manufacturing line. Driving power MOSFETs The DC input impedance of the power MOSFET is extremely high. When Vgs at 12V (or 5V), the gate draws the current only few nanoamperes. Thus once the gate has been driven up to “ON”ON level, the current could be negligible. In Figure 1, the current Ig1 and Ig2 are required to move the gate up to 12V.The operation consists of charging Cgd and Cgs. Cgs1 and Cgs2 are the capacitances from gate to source of the high side and the low side power MOSFETs, respectively. In general data sheets, the Cgs is referred as “C iss” which is the input capacitance. Cgd1 and Cgd2 are the capacitances from gate to drain of the high side and the low side power MOSFETs, respectively and referred to the data sheets as "Crss," the reverse transfer capacitance. For example, tr1 and tr2 are the rising time of the high side and the low side power MOSFETs respectively, the required current Igs1 and Igs2, are showed below Figure1. The gate driver must supply Igs to Cgs and Igd to Cgd V O GND L d 2 s 2 C gs2 g 2 I g2 I gd2 I gs2 C gd2 C gs1 C gd1 I gd1 I gs1 I g1 D 2 s 1 d 1 D 1 g1 Vi +12V +12V t t Vg2 Vg1 Vphase However, the capacitance at the gate to source terminal should be considered. It requires relatively large currents to drive the gate up and down 12V (or 5V) rapidly. It also required to switch drain current on and off with the required speed. The required gate drive currents are calculated as follows. |
Similar Part No. - RT9602_07 |
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Similar Description - RT9602_07 |
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