3

CM600HB-90H

Single IGBTMOD™ HVIGBT

600 Amperes/4500 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Input Capacitance

–

108

–

nF

Output Capacitance

–

8.0

–

nF

Reverse Transfer Capacitance

–

2.4

–

nF

Resistive

Turn-on Delay Time

––

2.4

µs

Load

Rise Time

––

2.4

µs

Switching

Turn-off Delay Time

––

6.0

µs

Times

Fall Time

Resistive Load Switching Operation

––

1.2

µs

Diode Reverse Recovery Time**

––

1.8

µs

Diode Reverse Recovery Charge**

–

240*

–

µC

* Pulse width and repetition rate should be such that device junction temperature rise is negligible.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Thermal Resistance, Junction to Case

Per IGBT

––

0.015

K/W

Thermal Resistance, Junction to Case

Per FWDi

––

0.030

K/W

Contact Thermal Resistance, Case to Fin

Per Module, Thermal Grease Applied

–

0.010

–

K/W