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CM30MD3-12H Datasheet(PDF) 2 Page - Powerex Power Semiconductors

Part No. CM30MD3-12H
Description  CI Module Single Phase Converter Three Phase Inverter 30 Amperes/600 Volts
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Maker  POWEREX [Powerex Power Semiconductors]
Homepage  http://www.pwrx.com
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CM30MD3-12H Datasheet(HTML) 2 Page - Powerex Power Semiconductors

   
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CM30MD3-12H
CI Module
Single Phase Converter + Three Phase Inverter
30 Amperes/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
Symbol
CM30MD3-12H
Units
Power Device Junction Temperature
Tj
-40 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Mounting Torque, M4 Mounting Screws
13
in-lb
Module Weight (Typical)
100
Grams
Isolation Voltage, AC 1 minute, 60Hz
VRMS
2500
Volts
Converter Part
Repetitive Peak Reverse Voltage
VRRM
800
Volts
Recommended AC Input Voltage
Ea
220
Volts
DC Output Current
IO
25
Amperes
Surge (Non-repetitive) Forward Current
IFSM
550
Amperes
I2t for Fusing
I2t
1.2 x 103
A2s
IGBT Inverter Part
Collector-Emitter Voltage (G-E Short)
VCES
600
Volts
Gate-Emitter Voltage (C-E Short)
VGES
±20
Volts
Collector Current
IC
30
Amperes
Collector Current (Pulse)*
ICM
60
Amperes
Emitter Current**
IE
30
Amperes
Emitter Current** (Pulse)*
IEM
60
Amperes
Maximum Collector Dissipation
PC
66
Watts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Converter Sector
Repetitive Reverse Current
IRRM
VR = VRRM, Tj = 150°C—
8
mA
Forward Voltage Drop
VFM
IF = 40A
1.6
Volts
Thermal Resistance (Junction-to-Fin)
Rth(j-f)
Per Diode
1.7
°C/W
IGBT Inverter Sector
Collector Cutoff Current
ICES
VCE = VCES, VGE = 0V
1
mA
Gate-Emitter Threshold Voltage
VGE(th)
VCE = 10V, IC = 3.0mA
4.5
6.0
7.5
Volts
Gate-Emitter Cutoff Current
IGES
VGE = VGES, VCE = 0V
0.5
µA
Collector-Emitter Saturation Voltage
VCE(sat)
VGE = 15V, IC = 30A, Tj = 25°C
2.1
2.8
Volts
VGE = 15V, IC = 30A, Tj = 150°C
2.15
Volts
Input Capacitance
Cies
3.0
nF
Output Capacitance
Coes
VGE = 0V, VCE = 10V
2.4
nF
Reverse Transfer Capacitance
Cres
0.6
nF
Total Gate Charge
QG
VCC = 300V, IC = 30A, VGE = 15V
90
nC
Resistive
Turn-on Delay Time
td(on)
VGE1 = VGE2 = 15V,
120
nS
Load
Rise Time
tr
VCC = 300V, IC = 30A,
300
nS
Switching
Turn-off Delay Time
td(off)
Rg = 21Ω,
200
nS
Times
Fall Time
tf
Resistive Load
300
nS
Emitter-Collector Voltage
VEC
IE = 30A, VGE = 0V
2.8
Volts
Reverse Recovery Time
trr
IE = 30A, VGE = 0V,
110
nS
Reverse Recovery Charge
Qrr
diE/dt = -60A/µs
0.08
µC
Thermal Resistance (Junction-to-Fin)
Rth(j-f)
Per IGBT
1.9
°C/W
Per FWDi
2.4
°C/W
* Pulse width and repetition rate should be such that device junction temperature does not exceed maximum rating.
** Characteristics of the anti-parallel emitter-collector free-wheel diode.


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