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HAT2165N Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. HAT2165N
Description  Silicon N Channel Power MOS FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2165N Datasheet(HTML) 2 Page - Renesas Technology Corp

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HAT2165N
Rev.0.01, Jul.15.2004, page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
30
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
± 20
V
IG = ±100
µA, VDS = 0
Gate to source leak current
IGSS
——
± 10
µAVGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
——
1
µAVDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
2.5
V
VDS = 10 V, I D = 1 mA
RDS(on)
—2.8
3.6
m
ID = 27.5 A, VGS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
—3.7
5.6
m
ID = 27.5 A, VGS = 4.5 V
Note4
Forward transfer admittance
|yfs|
60
100
S
ID = 27.5 A, VDS = 10 V
Note4
Input capacitance
Ciss
5180
pF
Output capacitance
Coss
1200
pF
Reverse transfer capacitance
Crss
380
pF
VDS = 10 V
VGS = 0
f = 1 MHz
Gate Resistance
Rg
0.5
Total gate charge
Qg
33
nc
Gate to source charge
Qgs
15
nc
Gate to drain charge
Qgd
7.1
nc
VDD = 10 V
VGS = 4.5 V
ID = 55 A
Turn-on delay time
td(on)
—13—
ns
Rise time
tr
—65—
ns
Turn-off delay time
td(off)
—60—
ns
Fall time
tf
—9.5
ns
VGS = 10 V, ID = 27.5 A
VDD
≅ 10 V
RL = 0.36
Rg = 4.7
Body–drain diode forward voltage
VDF
0.81
1.06
V
IF = 55 A, VGS = 0
Note4
Body–drain diode reverse recovery
time
trr
40
ns
IF = 55 A, VGS = 0
diF/ dt = 100 A/ µs
Notes: 4. Pulse test


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