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HAT2165N Datasheet(PDF) 5 Page - Renesas Technology Corp

Part No. HAT2165N
Description  Silicon N Channel Power MOS FET Power Switching
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2165N Datasheet(HTML) 5 Page - Renesas Technology Corp

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HAT2165N
Rev.0.01, Jul.15.2004, page 5 of 6
Source to Drain Voltage
V
(V)
SD
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
VDD
50
Vin
15 V
0
I D
VDS
I AP
V(BR)DSS
L
VDD
EAR =
L
• I
AP
2
2
1
V
V
- V
DSS
DSS
DD
Avalanche Test Circuit
Avalanche Waveform
100
80
60
40
20
25
50
75
100
125
150
0
Channel Temperature Tch (˚C)
Maximum Avalanche Energy vs.
Channel Temperature Derating
I
= 30 A
V
= 15 V
duty < 0.1 %
Rg > 50
AP
DD
100
80
60
40
20
0
0.4
0.8
1.2
1.6
2.0
Pulse Test
5 V
V
= 0
GS
10 V
Vin Monitor
D.U.T.
Vin
10 V
R L
V
= 10 V
DS
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
90%
10%
t f
Switching Time Test Circuit
Switching Time Waveform
Rg


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