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HAT2165N Datasheet(PDF) 4 Page - Renesas Technology Corp

Part No. HAT2165N
Description  Silicon N Channel Power MOS FET Power Switching
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2165N Datasheet(HTML) 4 Page - Renesas Technology Corp

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HAT2165N
Rev.0.01, Jul.15.2004, page 4 of 6
Case Temperature
Tc
(
°C)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward Transfer Admittance vs.
Drain Current
8
6
4
2
-25
0
25
50
75
100 125 150
0
I
= 10 A, 20 A
D
10 A, 20 A, 50 A
V
= 4.5 V
GS
10 V
Pulse Test
330
0.1
1
10
100
0.3
10
1000
100
30
300
1
0.3
3
0.1
Tc = -25
°C
DS
V
= 10 V
Pulse Test
75
°C
25
°C
50 A
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Drain Current
I
(A)
D
Switching Characteristics
0
5
10
15
20
25
30
10000
3000
1000
300
100
30
10
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
40
30
20
10
0
16
12
8
4
20
40
60
80
100
0
I
= 55 A
D
VGS
VDS
VDD = 5 V
10 V
25 V
V
= 25 V
DD
10 V
5 V
Gate Charge
Qg (nc)
Dynamic Input Characteristics
0.1
0.3
1
3
10
30
100
100
20
50
10
di / dt = 100 A /
µs
V
= 0, Ta = 25
°C
GS
Reverse Drain Current
I
(A)
DR
Body-Drain Diode Reverse
Recovery Time
100
300
30
10
0.1 0.2
2
10
100
20
1
0.5
5
1000
50
3
V
= 10 V , V
= 10 V
Rg = 4.7
, duty < 1 %
GS
DS
r
t
d(on)
t
d(off)
t
t f


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