286

CM200DY-28H

Dual IGBTMOD™ H-Series Module

200 Amperes/1400 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Ratings

Symbol

CM200DY-28H

Units

Junction Temperature

–40 to 150

°C

Storage Temperature

–40 to 125

°C

Collector-Emitter Voltage (G-E SHORT)

1400

Volts

Gate-Emitter Voltage

±20

Volts

Collector Current

200

Amperes

Peak Collector Current

400*

Amperes

Diode Forward Current

200

Amperes

Diode Forward Surge Current

400*

Amperes

Power Dissipation

1500

Watts

Max. Mounting Torque M6 Terminal Screws

–

26

in-lb

Max. Mounting Torque M6 Mounting Screws

–

26

in-lb

Module Weight (Typical)

–

400

Grams

V Isolation

2500

Volts

* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Collector-Cutoff Current

–

–

1.0

mA

Gate Leakage Current

–

–

0.5

µA

Gate-Emitter Threshold Voltage

5.0

6.5

8.0

Volts

Collector-Emitter Saturation Voltage

–

3.1

4.2**

Volts

–

2.95

–

Volts

Total Gate Charge

–

1020

–

nC

Diode Forward Voltage

–

–

3.8

Volts

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Input Capacitance

–

–

40

nF

Output Capacitance

–

–

14

nF

Reverse Transfer Capacitance

–

–

8

nF

Resistive

Turn-on Delay Time

–

–

250

ns

Load

Rise Time

–

–

400

ns

Switching

Turn-off Delay Time

–

–

300

ns

Times

Fall Time

–

–

500

ns

Diode Reverse Recovery Time

–

–

300

ns

Diode Reverse Recovery Charge

–

2.0

–

µC

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Thermal Resistance, Junction to Case

Per IGBT

–

–

0.085

°C/W

Thermal Resistance, Junction to Case

Per FWDi

–

–

0.18

°C/W

Contact Thermal Resistance

Per Module, Thermal Grease Applied

–

–

0.045

°C/W