MCM20014 datasheet(46/54 Pages) MOTOROLA

Part #	MCM20014

Description	1/3??Color VGA Digital Image Sensor

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Manufacturer	MOTOROLA [Motorola, Inc]

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MOTOROLA

MCM20014

46

POWER DISSIPATION (VDD = 3.0V, VDD referenced to VSS; Ta = 25°C)

Symbol

Parameter

Condition

Typ

Unit

PDYN

Dynamic Power

13.5 MHz MCLK Clock frequency

400

mW

PSTDBY

Standby Power

STDBY Pin Logic High

50

mW

PAVG

Average Power

13.5 MHz Operation (using STDBY)

200

mW

MCM20014 MONOCHROME CMOS IMAGE SENSOR ELECTRO-OPTICAL CHARACTERISTICS

Symbol

Parameter

Typ

Unit

Notes

Esat

Saturation Exposure

0.14

µJ/cm2

1

QE

Peak Quantum Efficiency (@550nm)

18

%

2

PRNU

Photoresponse Non-uniformity

12

% pk-pk

3

Notes:

1.For

λ = 550 nm wavelength.

2.Refer to typical values from Figure 3, MCM20014 nominal spectral response.

3.For a 100 x 100 pixel region under uniform illumination with output signal equal to 80% of saturation signal.

MCM20014 COLOR CMOS IMAGE SENSOR ELECTRO-OPTICAL CHARACTERISTICS

Symbol

Parameter

Typ

Unit

Notes

Esat

Saturation Exposure

0.3

µJ/cm2

1

QEr

Red Peak Quantum Efficiency @

λ = 650 nm

12

%

2

QEg

Green Peak Quantum Efficiency @

λ = 550 nm

11

%

2

QEb

Blue Peak Quantum Efficiency @

λ = 450 nm

8

%

2

Notes:

1.For

λ = 550 nm wavelength.

2.Refer to typical values from Figure 3, MCM20014 nominal spectral response.

CMOS IMAGE SENSOR CHARACTERISTICS

Symbol

Parameter

Typ

Unit

Notes

Sensitivity

3.0

V/lux-sec

Id

Photodiode Dark Current

0.2

nA/cm2

DSNU

Dark Signal Non-Uniformity (Entire Field)

0.4

% rms

CTE

Pixel Charge Transfer Efficiency

0.9995

%

1

fH

Horizontal Imager Frequency

11.5

MHz

4

Xab

Blooming Margin - shuttered light

200

2,3

Notes:

1. Transfer efficiency of photosite

2. Xab represents the increase above the saturation-irradiance level (Hsat) that the device can be exposed to before blooming of the pixel will

occur.

3. No column streaking

4. At 30fps VGA

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MCM20014 Datasheet(PDF) 46 Page - Motorola, Inc

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