Internet Data Sheet

Rev. 1.1, 2007-02

11

09072006-N4GC-EREN

HY[B/I]39SC128[800/160]FE

128-MBit Synchronous DRAM

4

Electrical Characteristics

4.1

Operating Conditions

TABLE 7

Absolute Maximum Ratings

Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings

are absolute ratings; exceeding only one of these values maycause irreversible damage to the integrated

circuit.

TABLE 8

DC Characteristics

Parameter

Symbol

Limit Values

Unit

Note/

Test Condition

Min.

Max.

Input / Output voltage relative to

V

SS

V

–1.0

+4.6

V

—

Voltage on

V

V

DD

–1.0

+4.6

V

—

Voltage on

V

V

DDQ

–1.0

+4.6

V

—

Operating Temperature for HYB...

T

A

0+70

°C—

Operating Temperature for HYI...

T

A

–40

+85

°C—

Storage temperature range

T

STG

–55

+150

°C—

Power dissipation per SDRAM component

P

D

—1

W

—

Data out current (short circuit)

I

OUT

—50

mA

—

Parameter

Symbol

Values

Unit

Note/

Test Condition

Min.

Max.

Supply Voltage

V

DD

3.0

3.6

V

1)

1) All voltages are referenced to

V

SS

I/O Supply Voltage

V

DDQ

3.0

3.6

V

1)

Input high voltage

V

IH

2.0

V

V

1)2)

2)

V

Pulse width measured at 50 % points with amplitude measured peak to DC reference.

Input low voltage

V

IL

–0.3

+0.8

V

1)2)

Output high voltage (

I

V

OH

2.4

—

V

1)

Output low voltage (

I

V

OL

—0.4

V

1)

Input leakage current, any input

(0 V <

V

I

IL

–5

+5

µA—

Output leakage current

(DQs are disabled, 0 V <

V

I

OL

–5

+5

µA—