238

CM150DY-12H

Dual IGBTMOD™ H-Series Module

150 Amperes/600 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Ratings

Symbol

CM150DY-12H

Units

Junction Temperature

–40 to 150

°C

Storage Temperature

–40 to 125

°C

Collector-Emitter Voltage (G-E SHORT)

600

Volts

Gate-Emitter Voltage

±20

Volts

Collector Current

150

Amperes

Peak Collector Current

300*

Amperes

Diode Forward Current

150

Amperes

Diode Forward Surge Current

300*

Amperes

Power Dissipation

600

Watts

Max. Mounting Torque M5 Terminal Screws

–

17

in-lb

Max. Mounting Torque M6 Mounting Screws

–

26

in-lb

Module Weight (Typical)

–

270

Grams

V Isolation

2500

Volts

* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Collector-Cutoff Current

–

–

1.0

mA

Gate Leakage Current

–

–

0.5

µA

Gate-Emitter Threshold Voltage

4.5

6.0

7.5

Volts

Collector-Emitter Saturation Voltage

–

2.1

2.8**

Volts

–

2.15

–

Volts

Total Gate Charge

–

450

–

nC

Diode Forward Voltage

–

–

2.8

Volts

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Input Capacitance

––

15

nF

Output Capacitance

–

–

5.3

nF

Reverse Transfer Capacitance

–

–

3

nF

Resistive

Turn-on Delay Time

–

–

200

ns

Load

Rise Time

–

–

550

ns

Switching

Turn-off Delay Time

–

–

300

ns

Times

Fall Time

–

–

300

ns

Diode Reverse Recovery Time

–

–

110

ns

Diode Reverse Recovery Charge

–

0.41

–

µC

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Thermal Resistance, Junction to Case

Per IGBT

–

–

0.21

°C/W

Thermal Resistance, Junction to Case

Per FWDi

–

–

0.47

°C/W

Contact Thermal Resistance

Per Module, Thermal Grease Applied

–

–

0.065

°C/W