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QM100HY-H Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. QM100HY-H
Description  HIGH POWER SWITCHING USE INSULATED TYPE
Download  5 Pages
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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QM100HY-H Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

   
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Feb.1999
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT
IC (A)
COLLECTOR CURRENT
IC (A)
BASE-EMITTER VOLTAGE
VBE (V)
BASE CURRENT
IB (A)
COLLECTOR CURRENT
IC (A)
MITSUBISHI TRANSISTOR MODULES
QM100HY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
1
10
0
10
3
10
2
10
1
10
0
10
–1
10
0
10
1
10
2
10
3
10
2
10
1
10
0
10
0
10
1
10
2
10
3
10
1
10
0
10
7
5
4
3
2
–1
10
7
5
4
3
2
1.0
1.4
1.8
2.2
2.6
3.0
VCE=2.0V
Tj=25°C
200
160
120
80
40
0
0
1
2
345
Tj=25°C
IB=2.0A
IB=1.0A
IB=0.6A
IB=0.4A
IB=0.2A
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
VCE=2.0V
VCE=5.0V
Tj=25°C
Tj=125°C
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10
23 4 5 7
1
10
23 4 5 7
2
10
2
Tj=25°C
Tj=125°C
VBE(sat)
VCE(sat)
IB=1.3A
7
5
3
2
7
5
3
2
7
5
3
24
4
4
–2
10
0
1
2
3
4
5
–1
10
Tj=25°C
Tj=125°C
IC=150A
IC=70A
IC=100A
IC=50A
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
IB1=–IB2=2A
VCC=300V
ton
Tj=25°C
Tj=125°C
ts
tf


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