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M93C86 Datasheet(PDF) 37 Page - STMicroelectronics |
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M93C86 Datasheet(HTML) 37 Page - STMicroelectronics |
37 / 38 page M93C86, M93C76, M93C66, M93C56, M93C46 Revision history 37/38 31-Jul-2007 7 Document reformatted. TSSOP8 3 × 3 mm (DS) package removed. Erase/Write Enable (EWEN) instruction replaced by Write Enable (WEN). Erase/Write Disable (EWDS) instruction replaced by Write Disable (WDS). Section 7: Initial delivery state modified, ACTIVE POWER AND STANDBY POWER MODES section removed. ICC1 test conditions modified in Table 15, Table 16, Table 17, Table 18 and Table 19. Note 1 added to Table 15. tW parameter description modified in Table 20, Table 21, Table 22 and Table 23.. SO8 narrow and UFDFPN8 package specifications updated (see Section 12: Package mechanical). Table 29, Table 30, Table 31, Table 32 and Table 33 added. Blank option removed under Plating technology in Table 27: TSSOP8 – 8 lead thin shrink small outline, package mechanical data. Section 2: Connecting to the serial bus added. Device grade 7 removed. Table 34. Document revision history (continued) Date Revision Changes |
Similar Part No. - M93C86_07 |
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Similar Description - M93C86_07 |
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