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CM50TF-12H Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. CM50TF-12H
Description  MEDIUM POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM50TF-12H Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

   
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Sep.1998
H
P
G
R
TAB #250, t = 0.8
TAB #110, t = 0.5
R
L
R
L
B
E
J
F
F
K
M
Q
R
D
A
C
N
P
N
uv
w
B u PE u PB v PE v PB w PE w P
B u NE u NB v NE v NB w NE w N
S - DIA.
(2 TYP.)
P
N
(BuP)
GuP
(BvP)
GvP
(BwP)
GwP
(BuN)
GuN
(BvN)
GvN
(BwN)
GwN
EuP
EuN
u
EvP
v
EvN
EwP
w
EwN
Dimensions
Inches
Millimeters
A
5.00
127.0
B
4.33
±0.01
110.0
±0.2
C
3.86
98.0
D
2.20
56.0
E
1.57
40.0
F
1.12
28.5
G
1.04
26.5
H
1.01
25.6
J
0.98
25.0
Dimensions
Inches
Millimeters
K
0.85
21.5
L
0.83
21.0
M
0.75
19.0
N
0.71
18.0
P
0.69
17.5
Q
0.65
16.5
R
0.30
7.5
S
0.22 Dia.
Dia. 5.5
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
six IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM50TF-12H
is a 600V (VCES), 50 Ampere Six-
IGBT Module.
Type
Current Rating
VCES
Amperes
Volts (x 50)
CM
50
12
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM50TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE


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