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SLD-68HL1 Datasheet(PDF) 1 Page - Silonex Inc.

Part No. SLD-68HL1
Description  Planar Photodiode
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Manufacturer  SILONEX [Silonex Inc.]
Direct Link  http://www.silonex.com/
Logo SILONEX - Silonex Inc.

SLD-68HL1 Datasheet(HTML) 1 Page - Silonex Inc.

  SLD-68HL1 Datasheet HTML 1Page - Silonex Inc.  
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5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLD-68HL1
Planar Photodiode
Features
Low capacitance
Fast switching time
Low leakage current
Linear response vs irradiance
Hermetic TO-46 package with high dome lens
Multiple dark current ranges available
Description
This
small
area
planar,
passivated
silicon
photodetector
is
designed
to
operate
in
either
photovoltaic or reverse bias mode. It provides
excellent linearity in output signal versus irradiance.
This is an ideal detector for fast rise time applications.
Absolute Maximum Ratings
Storage Temperature
-40
°C to +125°C
Operating Temperature
-40
°C to +125°C
Soldering Temperature (1)
260
°C
Notes: (1) >2 mm from case for <5 sec.
(2) Ee = source @ 2854
°K
(3) Ee = source @
λ = 880 nm
CATHODE
(Common to case)
Anode
Chip Size = 1.7 mm X 1.7 mm
Active Area = 2.0 sq.mm.
25.4
Min.
45°
Dimensions in mm. (+/- 0.13)
1.0
5.1
4.7
0.50-0.52
ø 5.3
2.5
Directional Sensitivity Characteristics
0.0
0.2
0.4
0.6
0.8
1.0
10°
20°
30°
40°
50°
60°
70°
80°
90°
100°
1.0
0.8
0.6
0.4
120°
Half Angle = 15°
20°
40°
60°
80°
100°
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol
Parameter
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ISC
Short Circuit Current
50
70
µA
VR=0V, Ee=5mW/cm
2 (2)
VOC
Open Circuit Voltage
0.40
V
Ee=5mW/cm
2
(2)
ID
Reverse Dark Current
SLD-68HL1A
100
nA
VR=100mV, Ee=0
SLD-68HL1B
100
nA
VR=5V, Ee=0
SLD-68HL1C
10
nA
VR=5V, Ee=0
SLD-68HL1D
1
nA
VR=5V, Ee=0
SLD-68HL1E
250
pA
VR=5V, Ee=0
CJ
Junction Capacitance
40
pF
VR=0, Ee=0, f=1MHz
tR
Rise Time
1.0
µs
VR=10V, RL=1k
Ω (3)
tF
Fall Time
1.5
µs
VR=10V, RL=1k
Ω (3)
TCI
Temp. Coef.
+0.2
%/
°C (2)
VBR
Reverse Breakdown Voltage
50
V
IR=100
µA
λ
P
Maximum Sensitivity Wavelength
930
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
θ
1/2
Acceptance Half Angle
15
deg
(off center-line)
Specifications subject to change without notice
101987 REV 2


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