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SLSD-71N6 Datasheet(PDF) 1 Page - Silonex Inc.

Part No. SLSD-71N6
Description  Solderable Planar Photodiode
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Manufacturer  SILONEX [Silonex Inc.]
Direct Link  http://www.silonex.com/
Logo SILONEX - Silonex Inc.

SLSD-71N6 Datasheet(HTML) 1 Page - Silonex Inc.

  SLSD-71N6 Datasheet HTML 1Page - Silonex Inc.  
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5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLSD-71N6
Solderable Planar Photodiode
Features
Visible to IR spectral irradiance range
High reliability
Oxide passivation
Linear short circuit current
Low capacitance, high speed
Protective coating
Description
The Silonex series of silicon solderable planar
photodiodes feature low cost, high reliability, and
linear short circuit current over a wide range of
illumination. These devices are widely used for light
sensing and power generation because of their
stability and high efficiency.
They are particularly
suited to power conversion applications due to their
low
internal
impedance,
relatively
high
shunt
impedance, and stability.
The photodiodes have a
protective coating that protects them from humidity
effects.
These devices also provide a reliable and
inexpensive detector for instrumentation and light
beam sensing applications.
Absolute Maximum Ratings
Storage Temperature
-40
°C to +105°C
Operating Temperature
-40
°C to +105°C
+RED
(Anode)
-BLK
(cathode)
#32 AWG Wire
Sensitive Area
(109.1 sq.mm.)
Dimensions in mm.
1.0
25.4
5.1
150 nom
5.08
Also available without leads as part number SLCD-61N6
0
.2
.4
.6
.8
1.0
10°
20°
30°
40°
50°
60°
70°
80°
90°
100°
1.0
.8
.6
.4
0
20°
40°
60°
80°
100° 120°
o
Half Angle = 60°
Directional Sensitivity Characteristics
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol
Parameter
Min
Typ
Max
Units
Teat Conditions
ISC
Short Circuit Current
3.7
6.0
mA
VR=0V, Ee=25mW/cm
2 (1)
VOC
Open Circuit Voltage
0.40
V
Ee=25mw/cm
2
(1)
ID
Reverse Dark Current
3.3
µA
VR=5V, Ee=0
CJ
Junction Capacitance
1.8
nF
VR=0V, Ee=0, f=1MHz
Sλ
Spectral Sensitivity
0.55
A/W
λ=940nm
VBR
Reverse Breakdown Voltage
20
V
IR=100
µA
λ
P
Maximum Sensitivity Wavelength
930
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
θ
1/2
Acceptance Half Angle
60
deg
(off center-line)
Notes: (1) Ee = light source @ 2854
°K
Specifications subject to change without notice
101286 REV 6


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