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IRF3708PBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRF3708PBF
Description  SMPS MOSFET HEXFET®Power MOSFET
Download  11 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRF3708PBF Datasheet(HTML) 2 Page - International Rectifier

 
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IRF3708/S/LPbF
2
www.irf.com
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
213
mJ
IAR
Avalanche Current

–––
62
A
Avalanche Characteristics
S
D
G
Diode Characteristics
62
248
A
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
49
–––
–––
S
VDS = 15V, ID = 50A
Qg
Total Gate Charge
–––
24
–––
ID = 24.8A
Qgs
Gate-to-Source Charge
–––
6.7
–––
nC
VDS = 15V
Qgd
Gate-to-Drain ("Miller") Charge
–––
5.8
–––
VGS = 4.5V
ƒ
Qoss
Output Gate Charge
–––
14
21
VGS = 0V, ID = 24.8A, VDS = 15V
td(on)
Turn-On Delay Time
–––
7.2
–––
VDD = 15V
tr
Rise Time
–––
50
–––
ID = 24.8A
td(off)
Turn-Off Delay Time
–––
17.6 –––
RG = 0.6Ω
tf
Fall Time
–––
3.7
–––
VGS = 4.5V
ƒ
Ciss
Input Capacitance
––– 2417 –––
VGS = 0V
Coss
Output Capacitance
–––
707
–––
VDS = 15V
Crss
Reverse Transfer Capacitance
–––
52
–––
pF
ƒ = 1.0MHz
VSD
Diode Forward Voltage
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
––– 0.88
1.3
V
TJ = 25°C, IS = 31A, VGS = 0V
ƒ
––– 0.80 –––
TJ = 125°C, IS = 31A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
41
62
ns
TJ = 25°C, IF = 31A, VR=20V
Qrr
Reverse Recovery Charge
–––
64
96
nC
di/dt = 100A/µs
ƒ
trr
Reverse Recovery Time
–––
43
65
ns
TJ = 125°C, IF = 31A, VR=20V
Qrr
Reverse Recovery Charge
–––
70
105
nC
di/dt = 100A/µs
ƒ
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.028 –––
V/°C Reference to 25°C, ID = 1mA
–––
8
12.0
VGS = 10V, ID = 15A
ƒ
–––
9.5
13.5 m
Ω VGS = 4.5V, ID = 12A
ƒ
–––
14.5
29
VGS = 2.8V, ID = 7.5A
ƒ
VGS(th)
Gate Threshold Voltage
0.6
–––
2.0
V
VDS = VGS, ID = 250µA
–––
–––
20
µA
VDS = 24V, VGS = 0V
–––
–––
100
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 12V
Gate-to-Source Reverse Leakage
–––
–––
-200
nA
VGS = -12V


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