MBR540
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Milimeter
Min.
Max.
12.70
14.73
14.23
16.51
9.66
10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
-
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Inches
Min.
Max.
0.500
0.580
0.560
0.650
0.380
0.420
0.139
0.161
2.300
0.420
0.100
0.135
0.045
0.070
-
0.250
0.025
0.035
0.190
0.210
0.140
0.190
0.015
0.022
0.080
0.115
0.025
0.055
Dimensions TO-220AC
C
A
MBR540
VRRM
V
40
VRMS
V
28
VDC
V
40
A=Anode, C=Cathode, TAB=Cathode
Symbol
Characteristics
I(AV)
Maximum Average Forward Rectified Current
@TC=95 C
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward Voltage At 5.0A DC (Note 1)
VF
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25 C
@TJ=100 C
CJ
Typical Junction Capacitance (Note 2)
TSTG
Storage Temperature Range
Maximum Ratings
5
175
0.55
0.5
33
350
-55 to +150
A
A
V
Unit
mA
pF
o
o
o
C
o
NOTES: 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
3. Thermal Resistance Junction To Case.
Typical Thermal Resistance (Note 3)
3.5
ROJC
C/W
o
TJ
Operating Temperature Range
-55 to +125
C
o
C(TAB)
C
A
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
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