DN3535

Features

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Applications

Normally-on switches

Solid state relays

Converters

Linear amplifiers

Constant current sources

Power supply circuits

Telecom

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General Description

This low threshold depletion-mode (normally-on) transistor

utilizes an advanced vertical DMOS structure and Supertex’s

well-proven

silicon-gate

manufacturing

process.

This

combination produces a device with the power handling

capabilities of bipolar transistors and with the high input

impedance and positive temperature coefficient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Absolute Maximum Ratings

Parameter

Value

Drain-to-source voltage

BV

DSX

Drain-to-gate voltage

BV

DGX

Gate-to-source voltage

±20V

Operating and storage

temperature

Soldering temperature*

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

*Distance of 1.6mm from case for 10 seconds.

Ordering Information

BV

BV

DGX

R

DS(ON)

(max)

I

DSS

(min)

Package Options

350V

10Ω

200mA

DN3535N8

DN3535N8-G

-G indicates package is RoHS compliant (‘Green’)

N-Channel Depletion-Mode Vertical DMOS FETs

Package Option

TO-243AA

(top view)

G

D

S

D