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JUL-25-2005
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2803NVG
SOP-8
Lead-Free
NIKO-SEM
VDS = 24V, VGS = 0V
VDS = -24V, VGS = 0V
N-Ch
P-Ch
1
-1
VDS = 20V, VGS = 0V, TJ = 55 °C
Zero Gate Voltage Drain Current
IDSS
VDS = -20V, VGS = 0V, TJ = 55 °C
N-Ch
P-Ch
10
-10
µA
VDS = 5V, VGS = 10V
On-State Drain Current
1
ID(ON)
VDS =-5V, VGS = -10V
N-Ch
P-Ch
20
-20
A
VGS = 4.5V, ID = 6A
VGS = -4.5V, ID = -5A
N-Ch
P-Ch
30
43.5
40
56
VGS = 10V, ID = 7A
Drain-Source
On-State
Resistance
1
RDS(ON)
VGS = -10V, ID = -6A
N-Ch
P-Ch
20.5
27.5
27.5
34
mΩ
VDS = 5V, ID = 7A
Forward Transconductance
1
gfs
VDS = -5V, ID = -6A
N-Ch
P-Ch
16
13
S
DYNAMIC
Input Capacitance
Ciss
N-Ch
P-Ch
680
920
Output Capacitance
Coss
N-Ch
P-Ch
105
190
Reverse Transfer Capacitance
Crss
N-Channel
VGS = 0V, VDS = 15V, f = 1MHz
P-Channel
VGS = 0V, VDS = -15V, f = 1MHz N-Ch
P-Ch
75
120
pF
Total Gate Charge
2
Qg
N-Ch
P-Ch
14
18.5
Gate-Source Charge
2
Qgs
N-Ch
P-Ch
1.9
2.7
Gate-Drain Charge
2
Qgd
N-Channel
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 7A
P-Channel
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -6A
N-Ch
P-Ch
3.3
4.5
nC
Turn-On Delay Time
2
td(on)
N-Ch
P-Ch
4.6
7.7
7
11.5
Rise Time
2
tr
N-Ch
P-Ch
4
5.7
6
8.5
Turn-Off Delay Time
2
td(off)
N-Ch
P-Ch
20
20
30
30
Fall Time
2
tf
N-Channel
VDD = 10V
ID ≅ 1A, VGS = 10V, RGEN = 3Ω
P-Channel
VDD = -10V
ID ≅ -1A, VGS = -10V, RGEN = 3Ω
N-Ch
P-Ch
5
9.5
8
14
nS
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