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HSG1002 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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HSG1002 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 38 page Rev.1.00, Apr.12.2004, page 1 of 37 HSG1002 SiGeHBT High Frequency Low Noise Amplifier REJ03G0196-0100Z Rev.1.00 Apr.12.2004 Features • High power gain and low noise figure ; • MSG = 21 dB typ. , NF = 0.7 dB typ. at V CE = 2 V,IC = 5 mA, f = 1.8 GHz MSG = 20 dB typ. , NF = 0.8 dB typ. at VCE = 2 V,IC = 5 mA, f = 2.4 GHz MSG = 16 dB typ. , NF = 1.2 dB typ. at VCE = 2 V,IC = 10 mA, f = 5.8 GHz • Transition Frequency fT = 38 GHz typ. at f = 1 GHz • V CEO = 3.5 V • Ideal for 2.4 GHz / 5 GHz Band WLAN and Cordless phone applications. Outline 1 2 3 4 1. Emitter 2. Collector 3. Emitter 4. Base MFPAK-4 VE- 1 2 3 4 Note: Marking is "VE-". Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 8V Collector to emitter voltage VCEO 3.5 V Emitter to base voltage VEBO 1.2 V Collector current IC 35 mA Pc 80 mW Collector power dissipation Pc note1 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Value on PCB ( FR-4 : 40 x 40 x 1.6mm Double side ) |
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