HSG1002 datasheet(1/38 Pages) RENESAS

Part #	HSG1002

Description	SiGeHBT High Frequency Low Noise Amplifier

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Manufacturer	RENESAS [Renesas Technology Corp]

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Rev.1.00, Apr.12.2004, page 1 of 37

HSG1002

SiGeHBT

High Frequency Low Noise Amplifier

REJ03G0196-0100Z

Rev.1.00

Apr.12.2004

Features

• High power gain and low noise figure ;

• MSG = 21 dB typ. , NF = 0.7 dB typ. at V

CE = 2 V,IC = 5 mA, f = 1.8 GHz

MSG = 20 dB typ. , NF = 0.8 dB typ. at VCE = 2 V,IC = 5 mA, f = 2.4 GHz

MSG = 16 dB typ. , NF = 1.2 dB typ. at VCE = 2 V,IC = 10 mA, f = 5.8 GHz

• Transition Frequency

fT = 38 GHz typ. at f = 1 GHz

• V

CEO = 3.5 V

• Ideal for 2.4 GHz / 5 GHz Band WLAN and Cordless phone applications.

Outline

1

2

3

4

1. Emitter

2. Collector

3. Emitter

4. Base

MFPAK-4

VE-

1

2

3

4

Note:

Marking is "VE-".

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

8V

Collector to emitter voltage

VCEO

3.5

V

Emitter to base voltage

VEBO

1.2

V

Collector current

IC

35

mA

Pc

80

mW

Collector power dissipation

Pc

note1

200

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. Value on PCB ( FR-4 : 40 x 40 x 1.6mm Double side )

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HSG1002 Datasheet(PDF) 1 Page - Renesas Technology Corp

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