CM50MD1-12H datasheet(2/5 Pages) MITSUBISHI

Part #	CM50MD1-12H

Description	MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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2 / 5 page

Feb.1999

MITSUBISHI IGBT MODULES

CM50MD1-12H

MEDIUM POWER SWITCHING USE

FLAT-BASE TYPE, INSULATED TYPE

MAXIMUM RATINGS (Tj = 25

°C)

INVERTER PART

CONVERTER PART

COMMON RATING

Collector-emitter voltage

Gate-emitter voltage

Collector Current

Emitter Current

Maximum collector dissipation

600

±20

50

100

50

100

104

G – E Short

C – E Short

TC = 25

°C

PULSE

(Note. 2)

TC = 25

°C

PULSE

(Note. 2)

Tf = 25

°C

Symbol

Parameter

Condition

Unit

Rating

V

A

W

VCES

VGES

IC

ICM

IE (Note. 1)

IEM (Note. 1)

PC (Note. 3)

Repetitive peak reverse voltage

Recommended AC input voltage

DC output current

Surge (non-repetitive) forward current

I2t for fusing

800

220

50

550

1.2!103

3

φ rectifying circuit Tf = 106°C

1 cycle at 60Hz, peak value Non-repetitive

Value for one cycle of surge current

Symbol

Parameter

Condition

Unit

Rating

V

A

A2s

VRRM

Ea

IO

IFSM

I2t

Tj

Tstg

Viso

—

Junction temperature

Storage temperature

Isolation voltage

Mounting torque

Weight

–40 ~ +150

–40 ~ +125

2500

0.98 ~1.47

100

AC 1 min.

Mounting M4 screw

Typical value

Symbol

Parameter

Condition

Unit

Rating

°C

V

N . m

g

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