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CM50MD1-12H Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part No. CM50MD1-12H
Description  MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM50MD1-12H Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

   
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Feb.1999
5
4
3
2
1
0
100
0
25
50
75
Tj = 25
°C
Tj = 125
°C
VGE = 15V
102
7
5
3
2
3
2
0
0.8
1.6
101
7
5
3
2.4
3.2
4.0
Tj = 25
°C
10
8
6
4
2
0
20
10
2
0
4
6
8
12141618
9
7
5
3
1
Tj = 25
°C
IC = 100A
IC = 50A
IC = 20A
100
75
50
25
0
10
5
1
0
2
3
4
6789
VGE = 20
(V)
Tj=25
°C
15
12
11
10
8
9
7
100
75
50
25
0
20
10
2
0
4
6
8
12141618
VCE = 10V
Tj = 25
°C
Tj = 125
°C
101
7
5
3
2
100
7
5
3
2
35 7
100 23 5 7 101 23
23
57
102
10–1
Cies
VGE = 0V
Coes
Cres
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISITICS
(TYPICAL)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE VS. VCE
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
MITSUBISHI IGBT MODULES
CM50MD1-12H
MEDIUM POWER SWITCHING USE
FLAT-BASE TYPE, INSULATED TYPE
PERFORMANCE CURVES


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