M13S256328A datasheet(3/47 Pages) ESMT

Part #	M13S256328A

Description	2M x 32 Bit x 4 Banks Double Data Rate SDRAM

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Manufacturer	ESMT [Elite Semiconductor Memory Technology Inc.]

Direct Link	http://www.esmt.com.tw/index.asp

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3 / 47 page

ESMT

M13S256328A

Elite Semiconductor Memory Technology Inc.

Publication Date : May. 2007

Revision : 1.2

3/47

Pin Description

(M13S256328A)

Pin Name

Function

Pin Name

Function

A0~A11,

BA0,BA1

Address inputs

- Row address A0~A11

- Column address A0~A7, A9

A8/AP : AUTO Precharge

BA0, BA1 : Bank selects (4 Banks)

DM0~DM3

DQ Mask enable in write cycle.

DQ0~DQ31

Data-in/Data-out

CLK, CLK

Clock input

RAS

Row address strobe

CKE

Clock enable

CAS

Column address strobe

CS

Chip select

WE

Write enable

VDDQ

Supply Voltage for GDQ

VSS

Ground

VSSQ

Ground for DQ

VDD

Power

VREF

Reference Voltage for SSTL

DQS0~DQS3

(for FBGA)

Bi- directional Data Strobe.

DQS0 correspond to the data on DQ0~DQ7.

DQS1 correspond to the data on DQ8~DQ15.

DQS2 correspond to the data on DQ16~DQ23.

DQS3 correspond to the data on DQ24~DQ31.

NC

No connection

Absolute Maximum Rating

Parameter

Symbol

Value

Unit

Voltage on any pin relative to VSS

VIN, VOUT

-0.5 ~ 3.6

V

Voltage on VDD supply relative to VSS

VDD, VDDQ

-1.0 ~ 3.6

V

Voltage on VDDQ supply relative to VSS

VDDQ

-0.5 ~ 3.6

V

Storage temperature

TSTG

-55 ~ +150

C

°

Power dissipation

PD

TBD

W

Short circuit current

IOS

50

mA

Note :

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommend operation condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

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M13S256328A Datasheet(PDF) 3 Page - Elite Semiconductor Memory Technology Inc.

M13S256328A Datasheet(HTML) 3 Page - Elite Semiconductor Memory Technology Inc.

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