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BZW04-342 Datasheet(PDF) 3 Page - Diotec Semiconductor |
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BZW04-342 Datasheet(HTML) 3 Page - Diotec Semiconductor |
3 / 3 page BZW04-5V8 ... BZW04-376B 1 1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 3 10 10 1 0.1 2 [kW] P PP 0.1µs t 1µs 10µs 100µs 1ms 10ms P Non repetitive peak pulse power versus pulse width (10/1000 wave form) Einzel-Impuls-Spitzenleistung in Abh. von der Pulsdauer (10/1000-Impuls) 120 100 80 60 40 20 0 [%] P M(AV) Steady state power dissip. vs. ambient temperature ) Dauer-Verlustleistung in Abh. v. d. Umgebungstemp. ) 1 1 [°C] T A 150 100 50 0 10/1000µs - pulse waveform 10/1000µs - Impulsform I PP P PP 100 80 60 40 20 0 0 1 2 3 4 [ms] [%] t P I/2 PPM P/2 PPM t = 10 µs r |
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