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BZT52C3V0 Datasheet(PDF) 2 Page - Diotec Semiconductor

Part No. BZT52C3V0
Description  Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden fur die Oberflahenmontage
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Maker  DIOTEC [Diotec Semiconductor]
Homepage  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BZT52C3V0 Datasheet(HTML) 2 Page - Diotec Semiconductor

  BZT52C3V0 Datasheet HTML 1Page - Diotec Semiconductor BZT52C3V0 Datasheet HTML 2Page - Diotec Semiconductor  
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BZT52C3V0 ... BZT52C75 (500 mW)
Maximum ratings
Grenzwerte
Type
Typ
Z-voltage range 1)
Z-Spanngs.-Bereich 1)
IZT = 5mA
Dynamic resistance
Diff. Widerstand
Temp. Coeffic.
of Z-voltage
…der Z-Spannung
Reverse volt.
Sperrspanng.
IR = 100 nA
Z-current 2)
Z-Strom 2)
TA = 25°C
VZ min [V]
VZ max [V]
ZZK
[Ω]
IZK [mA]
αVZ [10-4 /°C]
VR [V]
IZmax [mA]
BZT52C2V4
2.2
2.6
< 100
5
-9...-6
1 (<120 µA)
192
BZT52C2V7
2.5
2.9
< 110
5
-9...-6
1 (<120 µA)
172
BZT52C3V0
2.8
3.2
< 120
5
-8...-5
1 (<50 µA)
156
BZT52C3V3
3.1
3.5
< 130
5
-8...-5
1 (<20 µA)
143
BZT52C3V6
3.4
3.8
< 130
5
-8...-5
1 (<10 µA)
132
BZT52C3V9
3.6
4.2
< 130
5
-8...-5
1 (<5 µA)
119
BZT52C4V3
4.0
4.6
< 130
5
-6...-3
1 (<5 µA)
109
BZT52C4V7
4.4
5.0
< 130
5
-5...+2
1 (<2 µA)
100
BZT52C5V1
4.8
5.4
< 130
5
-2...+2
1.5 (<2 µA)
93
BZT52C5V6
5.2
6.0
< 80
5
-5...+5
2.5 (<1 µA)
83
BZT52C6V2
5.8
6.6
< 50
5
-3...+6
3 (<1 µA)
76
BZT52C6V8
6.4
7.2
< 30
5
+3...+7
3.5 (<0.5 µA)
69
BZT52C7V5
7.0
7.9
< 30
5
+3...+7
4 (<0.5 µA)
63
BZT52C8V2
7.7
8.7
< 30
5
+8...+7
5 (<0.5 µA)
57
BZT52C9V1
8.5
9,6
< 30
5
+3...+9
6 (<0.5 µA)
52
BZT52C10
9.4
10,6
< 30
5
+3...+10
7
47
BZT52C11
10.4
11,6
< 30
5
+3...+11
8
43
BZT52C12
11.4
12,7
< 35
5
+3...+11
9
39
BZT52C13
12.4
14,1
< 35
5
+3...+11
10
35
BZT52C15
13.8
15,6
< 40
5
+3...+11
11
32
BZT52C16
15.3
17,1
< 40
5
+3...+11
12
29
BZT52C18
16.8
19,1
< 45
5
+3...+11
13
26
BZT52C20
18.8
21,2
< 50
5
+3...+11
15
24
BZT52C22
20.8
23,3
< 55
5
+4...+12
17
21
BZT52C24
22.8
25,6
< 60
5
+4...+12
19
20
BZT52C27
25.1
28,9
< 70
2
+4...+12
21
17
BZT52C30
28
32
< 80
2
+4...+12
23
16
BZT52C33
31
35
< 80
2
+4...+12
25
14
BZT52C36
34
38
< 90
2
+4...+12
27
13
IZT = 2.5 mA
BZT52C39
37
41
<100
2
+4...+12
30 (< 2 µA)
12
BZT52C43
40
46
<130
2
+4...+12
33 (< 2 µA)
11
BZT52C47
44
50
<150
2
+4...+12
36 (< 2 µA)
10
BZT52C51
48
54
<180
2
+4...+12
39 (< 1 µA)
9
BZT52C56
52
60
<180
2
+4...+12
43 (< 1 µA)
8
BZT52C62
58
66
<200
2
+4...+12
47 (<0.2 µA)
8
BZT52C68
64
72
<250
2
+4...+12
52 (<0.2 µA)
7
BZT52C75
70
79
<300
2
+4...+12
57 (<0.2 µA)
6
1
Tested with pulses (20 ms) – Gemessen mit Impulsen (20 ms)
2
Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad an jedem Anschluss)
2
http://www.diotec.com/
© Diotec Semiconductor AG


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