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SDP8405-014 Datasheet(PDF) 1 Page - Honeywell Solid State Electronics Center |
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SDP8405-014 Datasheet(HTML) 1 Page - Honeywell Solid State Electronics Center |
1 / 4 page Silicon Phototransistor SDP8405 17 September 1997 DESCRIPTION FEATURES T-1 plastic package • 20¡ (nominal) acceptance angle • Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes • The SDP8405 is an NPN silicon phototransistor transfer molded in a T-1 clear plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification. (.51) .020 SQ.LEAD TYP. .050 (1.27) DIA. (3.94) .155 EMITTER COLLECTOR DIA. .125 (3.18) .115 (2.92) MIN. (12.7) .500 .03 (.76) .180(4.57) .200(5.08) MAX. (6.35) .250 .05(1.27) LEAD TYP. DIM_100.ds4 INFRA-22.TIF OUTLINE DIMENSIONS in inches (mm) 3 plc decimals ±0.005(0.12) Tolerance 2 plc decimals ±0.020(0.51) Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h © Honeywell Inc. |
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