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BAV100 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part No. BAV100
Description  Superfast Switching Surface Mount Si-Diodes
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BAV100 Datasheet(HTML) 1 Page - Diotec Semiconductor

  BAV100_07 Datasheet HTML 1Page - Diotec Semiconductor BAV100_07 Datasheet HTML 2Page - Diotec Semiconductor  
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BAV100 ... BAV103
BAV100 ... BAV103
Superfast Switching Surface Mount Si-Diodes
Superschnelle Si-Dioden für die Oberflächenmontage
Version 2005-08-15
Dimensions - Maße [mm]
Max. power dissipation – Max. Verlustleistung
500 mW
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50...300 V
Plastic case MiniMELF
Kunststoffgehäuse MiniMELF
DO-213AA
Weight approx.– Gewicht ca.
0.04 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Marking:
One green ring denotes “cathode” and “superfast switching diode”
The type numbers are noted only on the lable on the reel
Kennzeichnung:
Ein grüner Ring kennzeichnet “Katode” und “superschnelle Diode”
Die Typenbezeichnungen sind nur auf dem Rollenaufkleber vermerkt
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V] 1)
BAV100
50
60
BAV101
100
120
BAV102
200
200
BAV103
300
300
Max. power dissipation
Max. Verlustleistung
TA = 75°C
Ptot
500 mW 2)
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 75°C
IFAV
200 mA 2)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
650 mA 2)
Peak forward surge current, t ≤ 1 s
Stoßstrom, t ≤ 1 s
TA = 25°C
IFSM
1 A
Peak forward surge current, t ≤ 1 µs
Stoßstrom, t ≤ 1 µs
TA = 25°C
IFSM
5 A
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+175°C
-50...+175°C
1
Tested with pulses IR = 100 µA, tp = 300 µs, duty cycle ≤ 2%
Gemessen mit Impulsen IR = 100 µA, tp = 300 µs, Schaltverhältnis ≤ 2%
2
Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
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