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BAP63-05 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BAP63-05 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 6 page  2000 Feb 17 3 Philips Semiconductors Objective specification Silicon PIN diode BAP63-05 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF forward voltage IF = 100 mA 0.95 1.2 V IR reverse current VR =35 V − 10 µA Cd diode capacitance VR = 0; f = 100 MHz 0.3 − pF VR = 5 V; f = 1 MHz 0.21 0.3 pF rD diode forward resistance IF = 5 mA; f = 100 MHz; note 1 1.2 2 Ω IF = 10 mA; f = 100 MHz; note 1 1 −Ω τL charge carrier life time when switched from IF =10mA to IR =6mA; RL = 100 Ω; measured at IR =3 mA 75 − ns LS series inductance 1.4 − nH SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 220 K/W |
Similar Part No. - BAP63-05 |
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Similar Description - BAP63-05 |
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