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IRF6217PBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRF6217PBF
Description  SMPS MOSFET HEXFET®Power MOSFET
Download  8 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRF6217PBF Datasheet(HTML) 2 Page - International Rectifier

   
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IRF6217PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
0.55
–––
–––
S
VDS = -50V, ID = -0.42A
Qg
Total Gate Charge
–––
6.0
9.0
ID = -0.42A
Qgs
Gate-to-Source Charge
–––
1.6
2.4
nC
VDS = -120V
Qgd
Gate-to-Drain ("Miller") Charge
–––
2.8
4.2
VGS = -10V,
td(on)
Turn-On Delay Time
–––
12
–––
VDD = -75V
tr
Rise Time
–––
7.2
–––
ID = -0.42A
td(off)
Turn-Off Delay Time
–––
14
–––
RG = 6.2Ω
tf
Fall Time
–––
16
–––
VGS = -10V
ƒ
Ciss
Input Capacitance
–––
150
–––
VGS = 0V
Coss
Output Capacitance
–––
30
–––
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
10
–––
pF
ƒ = 1.0KHz
Coss
Output Capacitance
–––
150
–––
VGS = 0V, VDS = -1.0V, ƒ = 1.0KHz
Coss
Output Capacitance
–––
15
–––
VGS = 0V, VDS = -120V, ƒ = 1.0KHz
Coss eff.
Effective Output Capacitance
–––
45
–––
VGS = 0V, VDS = 0V to -120V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
15
mJ
IAR
Avalanche Current

–––
-1.4
A
Avalanche Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
-1.6
V
TJ = 25°C, IS = -0.42A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
51
77
ns
TJ = 25°C, IF = -0.42A
Qrr
Reverse RecoveryCharge
–––
86
130
nC
di/dt = -100A/µs
ƒ
Diode Characteristics
-1.8
-5.0
A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-150
–––
–––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
-0.17 ––– V/°C
Reference to 25°C, ID = -1mA
ƒ
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
2.4
VGS = -10V, ID = -0.42A
ƒ
VGS(th)
Gate Threshold Voltage
-3.0
–––
-5.0
V
VDS = VGS, ID = -250µA
–––
–––
-25
µA
VDS = -150V, VGS = 0V, TJ = 25°C
–––
–––
-250
VDS = -120V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
-100
VGS = -20V
Gate-to-Source Reverse Leakage
–––
–––
100
nA
VGS = 20V
IGSS
IDSS
Drain-to-Source Leakage Current
S
D
G


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