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SST39WF800A-90-4C-Y1QE Datasheet(PDF) 10 Page - Silicon Storage Technology, Inc |
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SST39WF800A-90-4C-Y1QE Datasheet(HTML) 10 Page - Silicon Storage Technology, Inc |
10 / 27 page 10 Data Sheet 8 Mbit Multi-Purpose Flash SST39WF800A ©2006 Silicon Storage Technology, Inc. S71258-06-000 07/07 TABLE 8: DC Operating Characteristics, VDD = 1.65-1.95V1 Symbol Parameter Limits Test Conditions Min Max Units IDD Power Supply Current Address input=VILT/VIHT, at f=5 MHz, VDD=VDD Max Read 15 mA CE#=VIL, OE#=WE#=VIH, all I/Os open Program and Erase 20 mA CE#=WE#=VIL, OE#=VIH ISB Standby VDD Current2 20 µA CE#=VDD, VDD=VDD Max ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 1 µA VOUT=GND to VDD, VDD=VDD Max VIL Input Low Voltage 0.2VDD VDD=VDD Min VIH Input High Voltage 0.8VDD VVDD=VDD Max VOL Output Low Voltage 0.1 V IOL=100 µA, VDD=VDD Min VOH Output High Voltage VDD-0.1 V IOH=-100 µA, VDD=VDD Min T8.0 1258 1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C (room temperature), and VDD = 1.8V. Not 100% tested. 2. 20 µA is the maximum ISB for all SST39WF800A commercial grade devices. 30 µA is the maximum ISB for all 39WF800A industrial grade devices. For all SST39WF800A commercial and industrial devices, ISB typical is under 5 µA. TABLE 9: Recommended System Power-up Timings Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Power-up to Read Operation 100 µs TPU-WRITE1 Power-up to Program/Erase Operation 100 µs T9.0 1258 TABLE 10: Capacitance (TA = 25°C, f=1 MHz, other pins open) Parameter Description Test Condition Maximum CI/O1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. I/O Pin Capacitance VI/O = 0V 12 pF CIN1 Input Capacitance VIN = 0V 6 pF T10.0 1258 TABLE 11: Reliability Characteristics Symbol Parameter Minimum Specification Units Test Method NEND1,2 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. 2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a higher minimum specification. Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T11.0 1258 |
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