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IRL3714PBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRL3714PBF
Description  SMPS MOSFET HEXFET®Power MOSFET
Download  12 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRL3714PBF Datasheet(HTML) 2 Page - International Rectifier

 
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IRL3714/S/LPbF
2
www.irf.com
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
p-n junction diode.
–––
–––
1.3
V
TJ = 25°C, IS = 18A, VGS = 0V
ƒ
–––
0.88
–––
TJ = 125°C, IS = 18A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
35
53
ns
TJ = 25°C, IF = 18A, VR=10V
Qrr
Reverse Recovery Charge
–––
34
51
nC
di/dt = 100A/µs
ƒ
trr
Reverse Recovery Time
–––
35
53
ns
TJ = 125°C, IF = 18A, VR=10V
Qrr
Reverse Recovery Charge
–––
35
53
nC
di/dt = 100A/µs
ƒ
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.022
––– V/°C Reference to 25°C, ID = 1mA
–––
15
20
VGS = 10V, ID = 18A
ƒ
–––
21
28
VGS = 4.5V, ID = 14A
ƒ
VGS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
VDS = VGS, ID = 250µA
–––
–––
20
µA
VDS = 16V, VGS = 0V
–––
–––
100
VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-200
nA
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
72
mJ
IAR
Avalanche Current

–––
14
A
Avalanche Characteristics
S
D
G
Diode Characteristics
A
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
17
–––
–––
S
VDS = 10V, ID = 14A
Qg
Total Gate Charge
–––
6.5
9.7
ID = 14A
Qgs
Gate-to-Source Charge
–––
1.8
–––
nC
VDS = 10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
2.9
–––
VGS = 4.5V
Qoss
Output Gate Charge
–––
7.1
–––
VGS = 0V, VDS = 10V
td(on)
Turn-On Delay Time
–––
8.7
–––
VDD = 10V
tr
Rise Time
–––
78
–––
ID = 14A
td(off)
Turn-Off Delay Time
–––
10
–––
RG = 1.8Ω
tf
Fall Time
–––
4.5
–––
VGS = 4.5V
ƒ
Ciss
Input Capacitance
–––
670
–––
VGS = 0V
Coss
Output Capacitance
–––
470
–––
VDS = 10V
Crss
Reverse Transfer Capacitance
–––
68
–––
pF
ƒ = 1.0MHz
VSD
Diode Forward Voltage
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
36
140
m


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