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IRG4BC20FDPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRG4BC20FDPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 11 page  Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 16 IC @ TC = 100°C Continuous Collector Current 9.0 ICM Pulsed Collector Current 64 A ILM Clamped Inductive Load Current 64 IF @ TC = 100°C Diode Continuous Forward Current 7.0 IFM Diode Maximum Forward Current 32 VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 60 PD @ TC = 100°C Maximum Power Dissipation 24 TJ Operating Junction and-55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm) Parameter Min. Typ. Max. Units RθJC Junction-to-Case - IGBT 2.1 RθJC Junction-to-Case - Diode 3.5 °C/W RθCS Case-to-Sink, flat, greased surface 0.50 RθJA Junction-to-Ambient, typical socket mount 80 Wt Weight 2 (0.07) g (oz) IRG4BC20FDPbF INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFAST SOFT RECOVERY DIODE Features E G n-channel C VCES = 600V VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A Thermal Resistance Fast CoPack IGBT 12/23/03 Absolute Maximum Ratings Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-220AB package Lead-Free Benefits Generation -4 IGBTs offer highest efficiencies available IGBTs optimized for specific application conditions HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs PD - 94906 W TO-220AB www.irf.com 1 |
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