2

Parameters / Conditions

Symbol

Unit

Max

Drain to Ground Voltage

Vdd

V

5.5

Gate-Drain Voltage

Vgd

V

-8

Drain Current

Idd

mA

200

Gate Bias Voltage

Vg

V

+0.8

Gate Bias Current

Ig

mA



RF CW Input Power Max

Pin

dBm

0

Max channel temperature

Tch

C

+50

Storage temperature

Tstg

C

-65 +50

Maximum Assembly Temp

Tmax

C

260 for 20s

1. Operationinexcessofanyoftheseconditionsmayresultinpermanentdamagetothisdevice.TheabsolutemaximumratingsforVdd,Vgd,Idd,

Vg,IgandPinweredeterminedatanambienttemperatureof25°Cunlessnotedotherwise.

Parameter and Test Condition

Symbol

Unit

Min

Typ

Max

Drain Supply Current (Vd=4.0 V)

Idd

mA

35

50

Drain Supply Voltage

Vd

V

3

4

5

Gate Bias Current

Ig

mA

0.

Gate Bias Voltage

Vg

V

-.

-0.95

-0.8

Thermal Resistance(3)

θjc

°C/W

35.

2. AmbientoperationaltemperatureTA=25°Cunlessnoted

3. Channel-to-backside Thermal Resistance (Tchannel = 34°C) as measured using infrared microscopy. Thermal Resistance at

backsidetemp.(Tb)=25°Ccalculatedfrommeasureddata.

TA=25°C,Vdd=4.0V,Idd=135mA,Zo=50

W

Parameters and Test Conditions

Freq. (GHz)

Symbol

Units

Minimum

Typical

Maximum

Sigma

20, 26, 29

Gain

dB

9

23

Noise Figure into 50

20, 26, 29

NF

dB

3

4.5

Output Power at dB Gain Compression

P-dB

dBm

8

Output Power at 3dB Gain Compression

Psat

dBm

20

Output Third Order Intercept Point

OIP3

dBm

29

Isolation

Iso

dB

-45

Input Return Loss

RLin

dB

-0

Output Return Loss

RLout

dB

-0

4. Refertocharacteristicplotsfordetailedindividualfrequencyperformance.

5. Alltestedparametersguaranteedwithmeasurementaccuracy±1.5dBforgainand±0.4dBforNF.