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NJT4031NT3G Datasheet(PDF) 1 Page - ON Semiconductor |
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NJT4031NT3G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2007 August, 2007 - Rev. 0 1 Publication Order Number: NJT4031N/D NJT4031N Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector -Emitter Sustaining Voltage - VCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain - hFE = 200 (Min) @ IC = 1.0 Adc = 100 (Min) @ IC = 3.0 Adc • Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.150 Vdc (Max) @ IC = 1.0 Adc = 0.300 Vdc (Max) @ IC = 3.0 Adc • SOT-223 Surface Mount Packaging • Epoxy Meets UL 94, V-0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V • These are Pb-Free Devices SOT-223 CASE 318E STYLE 1 MARKING DIAGRAM Schematic C 2,4 B 1 E 3 Top View Pinout C CE B 4 12 3 NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS Preferred devices are recommended choices for future use and best overall value. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION PIN ASSIGNMENT http://onsemi.com 1 4031N G AYW A = Assembly Location Y Year W = Work Week 4031N = Specific Device Code G = Pb-Free Package |
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