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NJT4031NT3G Datasheet(PDF) 1 Page - ON Semiconductor

Part # NJT4031NT3G
Description  Bipolar Power Transistors NPN Silicon
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NJT4031NT3G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2007
August, 2007 - Rev. 0
1
Publication Order Number:
NJT4031N/D
NJT4031N
Preferred Device
Bipolar Power Transistors
NPN Silicon
Features
Collector -Emitter Sustaining Voltage -
VCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain -
hFE
= 200 (Min) @ IC = 1.0 Adc
= 100 (Min) @ IC = 3.0 Adc
Low Collector -Emitter Saturation Voltage -
VCE(sat) = 0.150 Vdc (Max) @ IC = 1.0 Adc
= 0.300 Vdc (Max) @ IC = 3.0 Adc
SOT-223 Surface Mount Packaging
Epoxy Meets UL 94, V-0 @ 0.125 in
ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
These are Pb-Free Devices
SOT-223
CASE 318E
STYLE 1
MARKING
DIAGRAM
Schematic
C 2,4
B 1
E 3
Top View Pinout
C
CE
B
4
12
3
NPN TRANSISTOR
3.0 AMPERES
40 VOLTS, 2.0 WATTS
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
PIN ASSIGNMENT
http://onsemi.com
1
4031N
G
AYW
A
= Assembly Location
Y
Year
W
= Work Week
4031N
= Specific Device Code
G
= Pb-Free Package


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