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AMMP-6425 Datasheet(PDF) 2 Page - AVAGO TECHNOLOGIES LIMITED

Part No. AMMP-6425
Description  18-28 GHz 1W Power Amplifier in SMT Package
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Maker  AVAGO [AVAGO TECHNOLOGIES LIMITED]
Homepage  http://www.avagotech.com
Logo AVAGO - AVAGO TECHNOLOGIES LIMITED

AMMP-6425 Datasheet(HTML) 2 Page - AVAGO TECHNOLOGIES LIMITED

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2
Absolute Maximum Ratings [1]
Symbol
Parameters [1]
Units
Value
Notes
Vdd
Positive Supply Voltage
V
6
2
Vg
Gate Supply Voltage
V
-3 to 0.5
Idq
Drain Current
mA
700
PD
Power Dissipation
W
5.5
2, 3
Pin
CW Input Power
dBm
23
2
Tch,max
Maximum Operating Channel Temp.
°C
+155
4, 5
Tstg
Storage Case Temp.
°C
-65 to +155
Tmax
Maximum Assembly Temp (20 sec max)
°C
+260
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.
3. When operate at this condition with a base plate temperature of 85°C, the median time to failure (MTTF) is significantly reduced.
4. These ratings apply to each individual FET
5. Junction operating temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
DC Specifications/ Physical Properties [6]
Symbol
Parameters and Test Conditions
Units
Value
Idq
Drain Supply Current (Vdd=5 V, Vg set for Idq Typical)
mA
650
Vg
Gate Supply Operating Voltage (Id(Q) = 650 (mA))
V
-1.1
RθJC
Thermal Resistance[6] (Channel-to-Base Plate)
°C/W
17.8
Tch
Channel Temperature
°C
142.8
Notes:
6. Assume SnPb soldering to an evaluation RF board at 85°C base plate temperatures. Worst case is at saturated output power when DC power
consumption rises to 5.5W with 1.58W RF power delivered to load. Power dissipation is 3.92W and the temperature rise in the channel is 69.8
°C. In this condition, the channel temperature reached at the maximum operational channel temperature of 155°C. To maintain the maximum
operational temperature below 155°C, the base plate temperature must be maintained below 85°C
AMMP-6425 RF Specifications [1, 2, 3, 4]
(Data obtained from 2.4-mm connector based test fixture, and this data is including connecter loss, and board loss.)
TA= 25°C, Vdd = 5.0 V, Idq =650 mA, Vg = -1.1V, Zo=50Ω
Symbol
Parameters and Test Conditions
Units
Minimum
Typical
Maximum
Freq
Operational Frequency
GHz
18
28
Gain
Small-signal Gain[3, 4] Freq (GHz) = 18, 23
Freq (GHz) = 28
dB
dB
21
20
23
22
P-1dB
Output Power at 1dB[3] Gain Compression
Freq (GHz) = 18
Freq (GHz) = 23, 28
dBm
dBm
26
27
28
28
OIP3
Output Third Order Intercept Point
dBm
35
RLin
Input Return Loss
dB
10
RLout
Output Return Loss
dB
10
Isolation
Reverse Isolation
dB
43
Notes:
1. Small/Large -signal data measured in packaged form on a 2.4mm connecter based evaluation board at TA = 25°C.
2. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies
3. Specifications are derived from measurements in a 50Ω test environment. Aspects of the amplifier performance may be improved over a
narrower bandwidth by application of additional conjugate, linearity, or power matching.
4. Pre-assembly into package performance verified 100% on-wafer published specifications at Frequencies=18, 23, and 28GHz.
5. The Gain and P1dB tested at 18, 23 and 28 GHz guaranteed with measurement accuracy ±1.5dB for Gain and P1dB, except Gain at 18 GHz with
measurement accuracy ±1.8dB.


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