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A5N:3200.02 Datasheet(PDF) 4 Page - AEGIS SEMICONDUTORES LTDA

Part No. A5N:3200.02
Description  Phase Control Thyristors
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Manufacturer  AEGIS [AEGIS SEMICONDUTORES LTDA]
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A5N:3200.02 Datasheet(HTML) 4 Page - AEGIS SEMICONDUTORES LTDA

  A5N:3200.02 Datasheet HTML 1Page - AEGIS SEMICONDUTORES LTDA A5N:3200.02 Datasheet HTML 2Page - AEGIS SEMICONDUTORES LTDA A5N:3200.02 Datasheet HTML 3Page - AEGIS SEMICONDUTORES LTDA A5N:3200.02 Datasheet HTML 4Page - AEGIS SEMICONDUTORES LTDA  
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Fig. 7 - Gate Trigger Characteristics
TO-200AE
Fig. 8 - Outline Characteristics
1E-3
0.01
0.1
1
10
100
0.1
1
10
100
Frequency Limited by P
G(Av)
I
GD
V
GD
(b)
(a)
(3)
(2)
(1)
(1) P
GM = 10W, tp = 4ms
(2) P
GM = 20W, tp = 2ms
(3) P
GM = 40W, tp = 1ms
Rectangular gate pulse
a) Recommended load line for
rated di/dt: 20V, 10
W;
tr<=1
ms.
b)Recommended load line for
<=30% rated di/dt: 10V, 10
W;
tr<=1
ms.
Gate Characteristics
Instantaneous Gate Current (A)
SEMICONDUTORES LTDA.
AEGIS
A5N:3200.XXH


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