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A5N:1400.16 Datasheet(PDF) 1 Page - AEGIS SEMICONDUTORES LTDA

Part No. A5N:1400.16
Description  Phase Control Thyristors
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Maker  AEGIS [AEGIS SEMICONDUTORES LTDA]
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A5N:1400.16 Datasheet(HTML) 1 Page - AEGIS SEMICONDUTORES LTDA

   
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SEMICONDUTORES LTDA.
AEGIS
A5N:1400.XXH
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VOLTAGE RATINGS
VRSM ,VR (V)
Max. non-rep.
peak reverse voltage
TJ =0to125 C
TJ = -40 to 0 C
TJ =25to125 C
A5N:1400.16
1600
1600
1700
A5N:1400.18
1800
1800
1900
A5N:1400.20
2000
2000
2100
A5N:1400.22
2200
2200
2300
VRRM ,VR (V)
Max.
rep. peak reverse voltage
Part Number
MAXIMUM ALLOWABLE RATINGS
VALUE
UNITS
-40 to 125
C
-40 to 150
C
Max. Av. current
1400
A
@ Max. TC
70
C
3080
A
25.7
50 Hz half cycle sine wave
26.9
60 Hz half cycle sine wave
30.5
50 Hz half cycle sine wave
32
60 Hz half cycle sine wave
3300
t = 10ms
3000
t = 8.3 ms
4651
t = 10ms
4250
t = 8.3 ms
46510
kA
2s1/2
1000
A/
ms
16
W
3.0
W
3A
5V
2500
N
Initial TJ = 125 C, no voltage applied after surge.
I
2t
for time tx =I
2t1/2 *t
x
1/2. (0.1 < tx < 10ms).
I
2t1/2 Max. I2t1/2 capability
F Mounting Force
IF(RMS) Nom. RMS current
-
Non lubricated threads
I
2t Max. I2t capability
kA
2s
Initial TJ = 125 C, rated VRRM
applied after surge.
Initial TJ = 125 C, no voltage
applied after surge.
-
-
NOTES
Initial TJ = 125 C, rated VRRM
applied after surge.
KA
180 half sine wave
Initial TJ = 125 C, no voltage
applied after surge.
IF(AV)
PARAMETER
TJ Junction Temperature
Tstg Storage Temperature
di/dt Max. Non-repetitive rate-of-
rise current
IFSM Max. Peak non-rep. surge
current
TJ = 125 C, VD =VDRM,ITM = 1600A. Gate pulse: 20V, 20
W,
10
ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40%
of non-repetitive value.
PGM Max. Peak gate power
tp<5ms
PG(AV) Max. Av. gate power
+IGM Max. Peak gate current
-VGM Max. Peak negative gate
voltage
-
tp<5ms
-
O
O


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