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A1N:180.XXH Datasheet(PDF) 4 Page - AEGIS SEMICONDUTORES LTDA

Part No. A1N:180.XXH
Description  Phase Control Thyristors
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Manufacturer  AEGIS [AEGIS SEMICONDUTORES LTDA]
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A1N:180.XXH Datasheet(HTML) 4 Page - AEGIS SEMICONDUTORES LTDA

  A1N:180.XXH Datasheet HTML 1Page - AEGIS SEMICONDUTORES LTDA A1N:180.XXH Datasheet HTML 2Page - AEGIS SEMICONDUTORES LTDA A1N:180.XXH Datasheet HTML 3Page - AEGIS SEMICONDUTORES LTDA A1N:180.XXH Datasheet HTML 4Page - AEGIS SEMICONDUTORES LTDA  
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M16 x 1.5
3/4 UNF 2A
SW32
Fig. 7 - Gate Trigger Characteristics
TO-209AB (TO-93)
Fig. 8 - Outline Characteristics
SEMICONDUTORES LTDA.
AEGIS
A1N:180.XXH
1E-3
0.01
0.1
1
10
100
1000
0.1
1
10
100
(b)
(a)
I
GD
V
GD
Rectangular gate pulse
a) Recommended load line for
rated di/dt: 20V, 30W;
tr<=0.5ms, tp=>6ms.
b)Recommended load line for
<=30% rated di/dt: 15V, 40W;
tr<=1ms, tp=>6ms.
(1) P
GM = 12W, tp = 5ms
(2) P
GM = 30W, tp = 2ms
(3) P
GM = 60W, tp = 1ms
(4) P
GM = 200W, tp = 300ms
(4)
(3)
(2)
(1)
Gate Characteristics
Instantaneous Gate Current (A)


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