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A1N:180.XXH Datasheet(PDF) 2 Page - AEGIS SEMICONDUTORES LTDA

Part No. A1N:180.XXH
Description  Phase Control Thyristors
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Manufacturer  AEGIS [AEGIS SEMICONDUTORES LTDA]
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A1N:180.XXH Datasheet(HTML) 2 Page - AEGIS SEMICONDUTORES LTDA

  A1N:180.XXH Datasheet HTML 1Page - AEGIS SEMICONDUTORES LTDA A1N:180.XXH Datasheet HTML 2Page - AEGIS SEMICONDUTORES LTDA A1N:180.XXH Datasheet HTML 3Page - AEGIS SEMICONDUTORES LTDA A1N:180.XXH Datasheet HTML 4Page - AEGIS SEMICONDUTORES LTDA  
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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SEMICONDUTORES LTDA.
AEGIS
A1N:180.XXH
0
20
40
60
80
100
120
140
160
180
85
90
95
100
105
110
115
120
125
180º
120º
90º
60º
30º
*Sinusoidal waveform
Maximum Allowable Case Temperature
Average Forward Current (A)
0
20
40
60
80
100 120 140 160 180 200 220 240
80
85
90
95
100
105
110
115
120
125
DC
180º
120º
90º
60º
30º
*Rectangular waveform
Maximum Allowable Case Temperature
Average Forward Current (A)
CHARACTERISTICS
PARAMETER
MIN.
TYP.
MAX. UNITS
VTM peak on-state voltage
---
---
1.61
V
IL Latching current
---
---
400
mA
IH Holding current
---
---
500
mA
td Delay time
---
0.7
1
ms
tq Turn-off time
---
---
100
ms
dv/dt Critical rate-of-rise of
off-state voltage
---
---
1000 V/ms
IRM, IDM Peak reverse and off-
state current
---
15
30
mA
---
---
360
TC = -40 C
---
---
180
TC = 25 C
6
---
---
TC = -40 C
3
---
---
TC = 25 C
VGD DC gate voltage not to
trigger
---
---
0.3
V
---
---
0.14
C/W
---
---
0.16
C/W
---
---
0.164
C/W
RthCS Thermal resistance,
case-to-sink
---
---
0.08
C/W
wt Weight
---
280(10.34)
---
g(oz.)
Case Style
JEDEC
Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 565A.
Use low values for ITM < p rated IT(AV)
TEST CONDITIONS
---
TJ = 125 C
Av. power = VT(TO) * IT(AV) +rT * [IT(RMS)]
2, 180 Half Sine.
TC = 125 C, 12V anode. Gate pulse: 10V, 20W, 100ms.
TJ = 125 C, Exp. To 67% V DRM, gate open.
RthJC Thermal resistance,
junction-to-case
TJ = 125 C, ITM = 500A, di/dt = 25A/ms, VR = 50V. dv/dt = 20
V/ms lin. to rated VDRM. Gate: 0V, 100 W.
V
mW
TC = 25 C, 12V anode. Initial IT = 15A.
TC = 25 C, VD = VDRM, 50A resistive load. Gate pulse: 10V,
20W, 10ms, 1ms rise time.
TJ = 125 C, Rated VRRM and VDRM, gate open.
+12V anode-to-cathode. For recommended
gate drive see "Gate Characteristics" figure.
IGT DC gate current to trigger
---
TO-209AB(TO-93)
mA
V
Mtg. Surface smooth, flat and greased. Single side cooled.
TC = 25 C, Max. Value which will not trigger with rated VDRM
anode.
DC operation, single side cooled.
180 sine wave, single side cooled.
1.32
120 rectangular wave, single side cooled.
VT(TO) Threshold voltage
---
---
0.854
rT Slope resistance
---
---
VGT DC gate voltage to
trigger


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