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TSL2550 Datasheet(PDF) 3 Page - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS

Part No. TSL2550
Description  AMBIENT LIGHT SENSOR WITH SMBus INTERFACE
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Manufacturer  TAOS [TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS]
Direct Link  http://www.taosinc.com
Logo TAOS - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS

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TSL2550
AMBIENT LIGHT SENSOR
WITH SMBus INTERFACE
TAOS029L − OCTOBER 2007
3
The LUMENOLOGY r Company
r
r
Copyright E 2007, TAOS Inc.
www.taosinc.com
Electrical Characteristics over recommended operating free-air temperature range (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
SMBus output low voltage
IO = 50 μA
0.01
V
VOL
SMBus output low voltage
IO = 4 mA
0.4
V
I
Supply current
Active, VSMBCLK and VSMDATA = VDD,
VDD = 3.3 V ± 5%
0.35
0.6
mA
IDD
Supply current
Power down, VSMBCLK and VSMDATA =
VDD, VDD = 3.3 V ± 5%
10
μA
IIH
High level input current
VI = VDD
5
μA
IIL
Low level input current
VI = 0
−5
μA
Operating Characteristics, VDD = 3.3 V, TA = 255C (unless otherwise noted) (see Notes 2, 3, 4)
PARAMETER
TEST CONDITIONS
CHANNEL
MIN
TYP
MAX
UNIT
E
0
Ch0
1
Ee = 0
Ch1
1
ADC count value standard mode
λp = 640 nm
Ch0
639
799
959
counts
ADC count value, standard mode
λp = 640 nm
Ee = 72 μW/cm2
Ch1
85
counts
λp = 940 nm
Ch0
511
799
1039
λp = 940 nm
Ee = 140 μW/cm2
Ch1
703
E
0
Ch0
1
Ee = 0
Ch1
1
ADC count value extended mode
λp = 640 nm
Ch0
155
counts
ADC count value, extended mode
λp = 640 nm
Ee = 72 μW/cm2
Ch1
16
counts
λp = 940 nm
Ch0
155
λp = 940 nm
Ee = 140 μW/cm2
Ch1
139
ADC count value ratio: Ch1/Ch0,
λp = 640 nm, Ee = 72 μW/cm2
0.070
0.106
0.175
ADC count value ratio: Ch1/Ch0,
standard mode
λp = 940 nm, Ee = 140 μW/cm2
0.70
0.88
1.20
λp = 640 nm
Ch0
11.1
R
Irradiance responsivity standard mode
λp = 640 nm
Ee = 72 μW/cm2
Ch1
1.2
counts/
(μW/
Re
Irradiance responsivity, standard mode
λp = 940 nm
Ch0
5.7
(μW/
cm2)
λp = 940 nm
Ee = 140 μW/cm2
Ch1
5
cm2)
Fluorescent light source: 300 Lux
Ch0
2.8
R
Illuminance responsivity standard mode
Fluorescent light source: 300 Lux
Ch1
0.23
counts/
Rv
Illuminance responsivity, standard mode
Incandescent light source: 50 Lux
Ch0
19
counts/
lux
Incandescent light source: 50 Lux
Ch1
13
(Sensor Lux) / (actual Lux), standard mode
Fluorescent light source: 300 Lux
0.65
1
1.35
(Sensor Lux) / (actual Lux), standard mode
(Note 5)
Incandescent light source: 50 Lux
0.5
1
1.5
NOTES: 3. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Visible 640 nm LEDs
and infrared 940 nm LEDs are used for final product testing for compatibility with high volume production.
4. The 640 nm irradiance Ee is supplied by an AlInGaP light-emitting diode with the following characteristics: peak wavelength
λp = 640 nm and spectral halfwidth Δλ
½ = 17 nm.
5. The 940 nm irradiance Ee is supplied by a GaAs light-emitting diode with the following characteristics: peak wavelength
λp = 940 nm and spectral halfwidth Δλ
½ = 40 nm.
6. The sensor Lux is calculated using the empirical formula shown on p. 11 of this data sheet based on measured Ch0 and Ch1 ADC
count values for the light source specified. Actual Lux is obtained with a commercial luxmeter. The range of the (sensor Lux) / (actual
Lux) ratio is estimated based on the variation of the 640 nm and 940 nm optical parameters. Devices are not 100% tested with
fluorescent or incandescent light sources.


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