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THN405Z Datasheet(PDF) 1 Page - AUK corp |
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THN405Z Datasheet(HTML) 1 Page - AUK corp |
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1 / 5 page  1 □ Features - High gain bandwidth product f T = 17 GHz at VCE = 2 V, IC = 10 mA f T = 19 GHz at VCE = 3 V, IC = 15 mA - High power gain |S 21| 2 = 15 dB at V CE = 2 V, IC = 5 mA, f = 1.8 GHz MAG = 20 dB at V CE = 2 V, IC = 5 mA, f = 1.8 GHz - Low noise figure NF = 1.4 dB at V CE = 2 V, IC = 2 mA, f = 1.8 GHz □ Applications - Low noise amplifier, oscillator and buffer amplifier up to 3 GHz SOT-343 □ Absolute Maximum Ratings ( T A = 25 ℃ ) Pin Configuration 1. Base 2. Emitter 3. Emitter 4. Collector Unit in mm Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temperature ℃ Tstg -65 ~ 150 V BVEBO 1.5 V BVCEO 4.5 Tj Parameter Symbol Ptot 75 Ratings Unit BVCBO 10 V 150 ℃ IC 25 mA mW Caution : Electro Static Discharge sensitive device 1 4 3 2 THN405Z SiGe NPN Transistor Semiconductor |
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