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IRF540 Datasheet(PDF) 1 Page - STMicroelectronics

Part No. IRF540
Description  N-CHANNEL 100V - 0.055Ω - 22A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

IRF540 Datasheet(HTML) 1 Page - STMicroelectronics

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February 2003
NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &
IRF540
N-CHANNEL 100V - 0.055
Ω - 22A TO-220
LOW GATE CHARGE STripFET™ II POWER MOSFET
s
TYPICAL RDS(on) = 0.055Ω
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
LOW GATE CHARGE
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
TYPE
VDSS
RDS(on)
ID
IRF540
100 V
<0.077
22 A
1
2
3
TO-220
Ordering Information
ABSOLUTE MAXIMUM RATINGS
(
•) Pulse width limited by safe operating area.
1) ISD ≤22A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 12A, VDD = 30V
SALES TYPE
MARKING
PACKAGE
PACKAGING
IRF540
IRF540&
TO-220
TUBE
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
100
V
VGS
Gate- source Voltage
± 20
V
ID
Drain Current (continuous) at TC = 25°C
22
A
ID
Drain Current (continuous) at TC = 100°C
15
A
IDM(•)
Drain Current (pulsed)
88
A
Ptot
Total Dissipation at TC = 25°C
85
W
Derating Factor
0.57
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
9
V/ns
EAS (2)
Single Pulse Avalanche Energy
220
mJ
Tstg
Storage Temperature
-55 to 175
°C
Tj
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM


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