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STK7002B Datasheet(PDF) 3 Page - AUK corp |
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STK7002B Datasheet(HTML) 3 Page - AUK corp |
3 / 8 page KSD-T5C042-000 3 STK7002B Electrical Characteristics (Ta=25 °C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=10μA, VGS=0 60 - - V Gate-threshold voltage VGS(th) ID=250μA, VDS= VGS 1.0 - 2.5 V Drain-source leakage current IDSS VDS=60V, VGS=0V - - 1 μA Gate-source leakage IGSS VDS=0V, VGS=±20V - - ±100 nA RDS(ON) VGS=5V, ID=50mA - 2.8 4.2 Drain-Source on-resistance ④ RDS(ON) VGS=10V, ID=180mA 2.7 4.0 Ω Forward transfer admittance ④ gfs VDS=3V, ID=180mA - 353 mS Input capacitance Ciss - 20 30 Output capacitance Coss - 7.8 11.7 Reverse transfer capacitance Crss VGS=0V, VDS=25V, f=1MHz - 3.1 4.7 pF Turn-on delay time td(on) - 7 10.5 Turn-off delay time td(off) VDD=30V, VGS=10V ID=380mA, RG=25Ω ③④ - 11 16.5 ns Total gate charge Qg - 2.8 4.2 Gate-source charge Qgs - 0.4 0.6 Gate-drain charge Qgd VDD=30V, VGS=10V ID=380mA ③④ - 0.2 0.3 nC Source-Drain Diode Ratings and Characteristics (Ta=25 °C) Characteristic Symbol Test Condition Min Typ Max Unit Continuous source current IS - - 380 Source current (Pulsed) ① ISM Integral reverse diode in the MOSFET - - 1520 mA Forward voltage ④ VSD VGS=0V, IS=0.38A - - 1.4 V Reverse recovery time trr - 39 - ns Reverse recovery charge Qrr Is=380mA, VGS=0V dIs/dt=10A/us - 10 - uC Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=10mH, I AS=0.38A, VDD=20V, RG=25Ω ③ Pulse Test : Pulse Width< 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature |
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