KSD-T5C042-000

3

STK7002B

Electrical Characteristics

(Ta=25

°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

60

-

-

V

Gate-threshold voltage

1.0

-

2.5

V

Drain-source leakage current

-

-

1

μA

Gate-source leakage

-

-

±100

nA

-

2.8

4.2

Drain-Source on-resistance

④

2.7

4.0

Ω

Forward transfer admittance

④

-

353

mS

Input capacitance

Ciss

-

20

30

Output capacitance

Coss

-

7.8

11.7

Reverse transfer capacitance

Crss

-

3.1

4.7

pF

Turn-on delay time

-

7

10.5

Turn-off delay time

-

11

16.5

ns

Total gate charge

-

2.8

4.2

Gate-source charge

-

0.4

0.6

Gate-drain charge

-

0.2

0.3

nC

Source-Drain Diode Ratings and Characteristics

(Ta=25

°C)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

Continuous source current

-

-

380

Source current (Pulsed)

①

Integral reverse diode

in the MOSFET

-

-

1520

mA

Forward voltage

④

-

-

1.4

V

Reverse recovery time

-

39

-

ns

Reverse recovery charge

-

10

-

uC

Note ;

① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

② L=10mH, I

③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%

④ Essentially independent of operating temperature