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F1058 Datasheet(PDF) 2 Page - Polyfet RF Devices

Part No. F1058
Description  PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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Maker  POLYFET [Polyfet RF Devices]
Homepage  http://www.polyfet.com
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F1058 Datasheet(HTML) 2 Page - Polyfet RF Devices

   
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F1058 POUT vs PIN FREQ = 400 MHZ,
IDQ = 0.4A, VDS=28V
Pin in Watts
0
10
20
30
40
50
60
0
2
4
6
8
10
12
14
6
8
10
12
14
16
18
Pout
Gain
POUT VS PIN GRAPH
F1058
F1B 1 DIE Capacitance vs Vds
VDS IN VOLTS
1
10
100
0
5
10
15
20
25
30
Crss
Coss
Ciss
F1B 1DIE IV CURVE
Vds in Volts
0
1
2
3
4
5
6
0
2
4
6
8
10
12
14
16
18
20
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
F1B 1 DIE GM & ID vs VG
Vgs in Volts
0.01
0.1
1
10
0
2
4
6
8
10
12
14
Gm
Id
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
CAPACITANCE VS VOLTAGE
IV CURVE
ID AND GM VS VGS
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION
8/1/97


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