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THN6501S Datasheet(PDF) 2 Page - AUK corp

Part # THN6501S
Description  SiGe NPN Transistor
Download  15 Pages
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Manufacturer  AUK [AUK corp]
Direct Link  https:www.auk.co.kr
Logo AUK - AUK corp

THN6501S Datasheet(HTML) 2 Page - AUK corp

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THN6501 Series
□ Electrical Characteristics ( T
A = 25 ℃ )
VCE = 12 V, IB = 0 mA
VEB = 1 V, IC = 0 mA
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 15 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 15 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 15 mA, f = 1 GHz
VCE = 6 V, IC = 15 mA, f = 1 GHz
10
8
9
dB
dB
dB
Max.
pF
uA
5
0.5
uA
300
GHz
uA
Ω
dBm
27
10
dB
15
1.0
0.049
12
12.5
OIP3
Output 3rd Order Intercept
80
150
0.85
Maximum Available Gain
VCB = 10 V, f = 1 MHz
9
9.5
12.5
13
8
IEBO
MAG
Insertion Power Gain
Associated Gain
GA
Emitter Cut-off Current
fT
Transition Frequency
CCB
Collector to Base Capacitance
Minimum Noise Figure
Noise Resistance
rn
NFmin
11
14.5
Min.
Typ.
ICBO
ICEO
VCE = 3 V, IC = 30 mA
Collector Cut-off Current
VCB = 19 V, IE = 0 mA
Value
0.5
|S21|
2
hFE
DC Current Gain
VCE = 3 V, IC = 15 mA
Symbol
Parameter
Test Condition
Unit
2


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