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F1008 Datasheet(PDF) 1 Page - Polyfet RF Devices |
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F1008 Datasheet(HTML) 1 Page - Polyfet RF Devices |
1 / 2 page RF CHARACTERISTICS ( WATTS OUTPUT ) 40 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PATENTED GOLD METALIZED 40 Watts Gemini Package Style AK HIGH EFFICIENCY, LINEAR, ABSOLUTE MAXIMUM RATINGS (TC = 25 C) o Total Device Junction to Case Thermal Maximum Junction Storage Temperature DC Drain Current Drain to Gate Drain to Source Gate to Source 170 Watts 1.05 C o 200 -65 to 150 8 A 30V V V 70 70 ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Gps η VSWR Common Source Power Gai Drain Efficiency Load Mismatch Toleranc dB % Relative 13 60 0.8 20:1 Idq = Idq = Idq = 0.8 0.8 A, A, A, 28.0 Vds = V, 28.0 Vds = V, 28.0 Vds = V, F = 400 MHz F = 400 MHz F = 400 MHz Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 65 2 1 7 1 1.6 0.7 11 66 8 40 Mho Ohm Amp pF V V pF pF mA uA 0.1 Ids = A, Vgs = 0V 28.0 Vds = V, Vgs = 0V Vds = 0 V, Vgs = 30V 0.2 Ids = A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 8 Vgs = 20V, Vds = 10V 28.0 Vds = V, Vgs = 0V, F = 1 MHz A 28.0 Vds = V, Vgs = 0V, F = 1 MHz 28.0 Vds = V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com REVISION SILICON GATE ENHANCEMENT MODE RF POWER HIGH GAIN, LOW NOISE "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F enhance broadband performance t TM C o C o C/W o F1008 polyfet rf devices Dissipation Resistance Temperature Voltage Voltage Voltage 8/1/97 VDMOS TRANSISTOR |
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