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F1006 Datasheet(PDF) 2 Page - Polyfet RF Devices

Part No. F1006
Description  PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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Maker  POLYFET [Polyfet RF Devices]
Homepage  http://www.polyfet.com
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F1006 Datasheet(HTML) 2 Page - Polyfet RF Devices

   
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F1006 PIN VS POUT Idq=0.6A F=175 Mhz Vds=28v
PIN IN WATTS
0
20
40
60
80
100
120
140
160
180
200
0
5
10
15
20
25
30
POUT
6
8
10
12
14
16
18
GAIN
POUT
GAIN
Efficiency = 70 %
POUT VS PIN GRAPH
F1006
F1B 6 DICE CAPACITANCE
VDS IN VOLTS
10
100
1000
0
5
10
15
20
25
30
Crss
Coss
Ciss
F1B 6 DICE IV CURVE
Vds in Volts
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
12
14
16
18
20
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
F1B 6 DIE GM & ID vs VG
Vgs in Volts
0.1
1
10
100
0
2
4
6
8
10
12
14
Gm
Id
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
CAPACITANCE VS VOLTAGE
IV CURVE
ID AND GM VS VGS
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION
8/1/97


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